- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
Patent holdings for IPC class H01L 29/792
Total number of patents in this class: 3394
10-year publication summary
|
354
|
339
|
283
|
250
|
269
|
255
|
223
|
146
|
131
|
32
|
| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Kioxia Corporation | 9847 |
369 |
| Samsung Electronics Co., Ltd. | 131630 |
363 |
| Semiconductor Energy Laboratory Co., Ltd. | 10902 |
276 |
| Micron Technology, Inc. | 24960 |
247 |
| Sandisk Technologies LLC | 5684 |
193 |
| Renesas Electronics Corporation | 6305 |
182 |
| SK Hynix Inc. | 11030 |
160 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
158 |
| Macronix International Co., Ltd. | 2562 |
117 |
| Longitude Flash Memory Solutions Ltd. | 297 |
93 |
| United Microelectronics Corp. | 3921 |
64 |
| Spansion LLC | 437 |
53 |
| Infineon Technologies LLC | 597 |
53 |
| Tokyo Electron Limited | 11599 |
46 |
| Monolithic 3D Inc. | 270 |
42 |
| Sunrise Memory Corporation | 192 |
41 |
| Yangtze Memory Technologies Co., Ltd. | 1940 |
36 |
| Floadia Corporation | 75 |
34 |
| Kabushiki Kaisha Toshiba, doing business as Toshiba Corporation | 6275 |
33 |
| SPANSION Japan Limited | 113 |
28 |
| Other owners | 806 |